A novel buffer layer of Alq(3) in organic electroluminescent devices

作者：Zhang ZF; Deng ZB^*; Liang CJ; Lin P; Zhang MX; Xu DH

来源：Chinese Physics Letters, 2004, 21(6): 1150-1152.

Inserting the Alq(3) layer in the ITO/NPB interface as the buffer layer can improve the organic electroluminescent devices. The current density efficiency and power efficiency of the device with the Alq3 buffer layer rises to 6.5 cd/A and 1.21 m/W at the current density of 120 mA/cm(2), respectively. The improvement is mostly attributed to the balance of the hole and the electron injections.

• 出版日期2004-6
• 单位北京交通大学