n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors

作者：Shi, Bowen; Wang, Yangyang^*; Li, Jingzhen; Zhang, Xiuying; Yan, Jiahuan; Liu, Shiqi; Yang, Jie; Pan, Yuanyuan; Zhang, Han; Yang, Jinbo; Pan, Feng^*; Lu, Jing^*

来源：Physical Chemistry Chemical Physics, 2018, 20(38): 24641-24651.

DOI：10.1039/c8cp04615h

• FIELD-EFFECT TRANSISTORS
• ELECTRICAL CONTACTS
• INTERFACIAL PROPERTIES
• PHOSPHORENE
• MOBILITY
• SILICENE
• PERFORMANCE
• ARSENENE
• BARRIERS
• BANDGAP

Owing to their few lateral dangling bonds and enhanced gate electrostatics, two-dimensional semiconductors have attracted much attention for the fabrication of channels in next-generation fieldeffect transistors (FETs). Herein, combining first-principle band structure calculations with more precise quantum transport simulations, we systematically explore the interface properties between monolayer (ML) indium selenide (InSe) and a sequence of common electrodes in an FET. The ML InSe band structure is damaged by Sc, Au, Cr, Pt, and Pd electrodes but identifiable in contact with Ag, Cu, In, graphene and ML O-terminated Cr2C electrodes. A lateral n-type Schottky contact is generated with Sc, Au, Cr, Pt, Pd, and ML graphene electrodes owing to Fermi level pinning originating from the metalinduced gap states, which feature a pinning factor of 0.32. Luckily, a highly desirable lateral n-type Ohmic contact is generated with the Ag, Cu, and In electrodes. The calculated contact polarity is in agreement with the available experimental results using Au, Cr, ML graphene, Ag, and In as electrodes. Remarkably, a lateral p-type Schottky contact is generated with ML O-terminated Cr2C despite the very high work function of ML InSe. Therefore, this study offers a deeper understanding of ML InSe device interfaces and instructions for the design of ML InSe transistors.

• 出版日期2018-10-14
• 单位中国空间技术研究院; 北京大学