科研之友
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摘要
Room-temperature photoluminescence and optical transmittance spectroscopy of Co-doped (1 x 10(14), 5 x 10(16), and 1 x 10(17) cm(-2)) and Cu-doped (5 x 10(16) cm(-2)) ZnO wafers irradiated by D-D neutrons (fluence of 2.9 x 10(10) cm(-2)) have been investigated. After irradiation, the Co or Cu metal and oxide clusters in doped ZnO wafers are dissolved, and the wurtzite structure of ZnO substrate for each sample remains unchanged and keeps in high c-axis preferential orientation. The degree of irradiation-induced crystal disorder reflected from the absorption band tail parameter (E-0) is far greater for doped ZnO than the undoped one. Under the same doping concentration, the Cu-doped ZnO wafer has much higher irradiation-induced disorder than the Co-doped one. Photoluminescence measurements indicate that the introduction rate of both the zinc vacancy and the zinc interstitial is much higher for the doped ZnO wafer with a high doping level than the undoped one. In addition, both crystal lattice distortion and defect complexes are suggested to be formed in doped ZnO wafers. Consequently, the Co- or Cu-doped ZnO wafer (especially with a high doping level) exhibits very low radiation hardness compared with the undoped one, and the Cu-doped ZnO wafer is much less radiation-hard than the Co-doped one.
- 出版日期2013-3
- 单位兰州大学
