Desorption time of phosphorus during MPCVD growth of n-type (001) diamond

作者：Kawashima Hiroyuki; Kato Hiromitsu^*; Ogura Masahiko; Takeuchi Daisuke; Makino Toshiharu; Yamasaki Satoshi

来源：Diamond and Related Materials, 2016, 64: 208-212.

DOI：10.1016/j.diamond.2015.09.013

Phosphorus-doped diamond films were homoepitaxially grown by microwave plasma-enhanced chemical vapor deposition on (001)-oriented substrates with misorientation angles of 2.1 degrees, 5.3 degrees, 10 degrees, 16 degrees, and 20 degrees. The surface morphology and phosphorus incorporation of the grown diamond films were investigated by atomic force microscopy and secondary ion mass spectrometry, respectively. The misorientation angle of 10 degrees resulted in the smoothest surface, with a root mean square value of 1.0 nm. The phosphorus incorporation increased with increasing misorientation angle for the same gas flow ratio. Based on these data, we discuss the phosphorus incorporation mechanism, considering the desorption time of adsorbed phosphorus atoms on the surface of the growing diamond film.

• 出版日期2016-4