A simple and low-cost chemical etching method for controllable fabrication of large-scale kinked silicon nanowires

作者：He, Xiao; Li, Shaoyuan^*; Ma, Wenhui^*; Ding, Zhao; Yu, Jie; Qin, Bo; Yang, Jia; Zou, Yuxin; Qiu, Jiajia

来源：Materials Letters, 2017, 196: 269-272.

DOI：10.1016/j.matlet.2017.03.131

• Semiconductors
• Metal-catalyzed chemical etching
• Kinked silicon nanowires
• Microstructure
• Alternating etching
• Anti-reflection properties

In this paper, large-area and uniform kinked silicon nanowires (SiNWs) in Si(111) have been fabricated by an alternating metal-catalyzed chemical etching (AMCCE) method. The etching direction alternating between [111] and [100] is highly controllable in this system, and the morphology of kinked SiNWs can be customized easily through controlling the alternating frequency. Good anti-reflection properties were proved by UV-vis spectrophotometer, the average reflectance at 200-1100 nm is less than 10%, and moreover, the reflectance can be as low as 6% in the visible region (380-780 nm), which shows a promising potential application as an anti-reflection structure in the photovoltaic field.

• 出版日期2017-6-1
• 单位昆明理工大学