A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors

作者：You Wei Xiang; Su Pin^*

来源：IEEE Transactions on Electron Devices, 2016, 63(7): 2971-2974.

DOI：10.1109/TED.2016.2564424

• D semiconductors
• high-K gate dielectrics
• molybdenum disulphide (MoS2)
• short-channel effects
• subthreshold current model
• transition metal dichalcogenide (TMD)

This brief presents a compact subthreshold model for short-channel monolayer transition metal dichalcogenide (TMD) field-effect transistors. In this model, the impact of fringe fields from the high-K gate dielectric is considered and incorporated into a new characteristic-length expression using a single model parameter. This model has been verified with 2-D numerical simulations for TMD devices with gate length down to 5.9 nm based on ITRS 2028 low-power technology node.

• 出版日期2016-7