Direct Synthesis of alpha-Silicon Nitride Nanowires from Silicon Monoxide on Alumina

作者：Cui, Jiang; Li, Bin^*; Zou, Chunrong; Zhang, Changrui; Wang, Siqing

来源：Nanomaterials and Nanotechnology, 2015, 5: 32.

DOI：10.5772/61661

• Silicon Nitride Nanowires
• Nitridation
• Silicon Monoxide
• Alumina

Silicon nitride nanowires were synthesized using silicon monoxide as raw materials and an alumina plate as substrate at 1500 degrees C. The obtained nanowires were characterized by X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy and thermogravimetric-differential scanning calorimetry. The results revealed that silicon nitride nanowires possess a diameter of about 200 nm and a length of several hundred micrometres. The preferred growth direction of the nanowires was [100]. The chemical and structural composition of the silicon nitride nanowires were also studied and were shown to have a composition of primarily alpha-Si3N4. The temperature for fierce oxidation in air was above 1135 degrees C. The formation mechanism of silicon nitride nanowires was assumed to be a vapour-solid (VS) process.

• 出版日期2015-10-29
• 单位中国人民解放军国防科学技术大学