Dependence of the surface topology and raman scattering spectra of GexSi1-x/Si films on the composition variation over the layer thickness

作者：Lunin L S^*; Sysoev I A; Bavizhev M D; Lapin V A; Kuleshov D S; Malyavin F F

来源：Crystallography Reports, 2013, 58(3): 509-512.

DOI：10.1134/S1063774513030127

The surface topology and Raman scattering spectra of Ge (x) Si1 - x /Si(100) films are investigated in dependence of the composition variation over the film thickness. It is shown that the character of the Ge content variation in the Ge (x) Si1 - x alloy at the constant cumulative Ge fraction in the film (x (int) = 0.5) affects the surface morphology of the grown Ge (x) Si1 - x /Si layer. The heterostructures were grown by molecular-beam epitaxy.

• 出版日期2013-5