An Analysis of Efficiency Variation in an Al0.7Ga0.3As/Al0.48In0.52As Heterojunction Solar Cell with Change in Device Parameters Using Adept 1D Software

作者：Hague K A S M Ehetshamul^*; Bin Quddus Tahmid Nahian; Ferdaous Mohammad Tanvirul; Hogue Md Ashraful

来源：Electronic Materials Letters, 2013, 9(1): 47-52.

DOI：10.1007/s13391-012-2087-x

• heterojunction
• ternary alloys
• layer thickness
• doping concentration
• solar cells
• efficiency

In this paper, efficiency variation with change in device parameters (layer thickness and doping concentration) has been investigated in an Al0.7Ga0.3As/Al0.48In0.52As heterojunction solar cell using Adept 1D simulation software. The device uses a n-type Al0.7Ga0.3As top layer (Emitter), a p-type Al0.48In0.52As middle layer (Base), and ap-type Ga0.67In0.33As bottom layer, which, under high doping, acts as a passivating (BSF) layer. Germanium (Ge) substrate (p-doped) is used for the structure. Variation in efficiency is plotted against a particular changing parameter, keeping every other parameter fixed at some default value. After analysing the variation curves, two optimized designs have been proposed, which yield 19.57% and 20.56% efficiency, respectively.

• 出版日期2013-1