Scanning Tunneling Microscopy investigation of the graphene/6H-SiC(000(1)over-bar) (3 x 3) interface

作者：Hiebel F; Mallet P; Varchon F; Magaud L; Veuillen J Y^*

来源：Solid State Communications, 2009, 149(27-28): 1157-1160.

DOI：10.1016/j.ssc.2009.02.047

• Surfaces and interfaces
• Crystal growth
• Scanning tunneling microscopy

The early stages of the graphitization of the 6H-SiC(000 (1) over bar) (3 x 3) surface in an Ultra-High Vacuum (UHV) are investigated by means of scanning tunneling microscopy (STM). Different kinds of graphitic islands are found on the surface. One kind (called G_3 x 3) consists of a single graphene-like carbon plane covering the initial (3 x 3) reconstructed substrate surface. We observe a broad distribution of rotation angles between the substrate and the carbon plane revealed by superstructures of different directions and periods. Low bias images show that the graphene structure is preserved close to the Fermi level. The data indicate a weak substrate-graphene coupling for the G_3 x 3 islands.

• 出版日期2009-7