A Ring-Oscillator-Based Reliability Monitor for Isolated Measurement of NBTI and PBTI in High-k/Metal Gate Technology

作者：Kim Tony Tae Hyoung^*; Lu Pong Fei; Jenkins Keith A; Kim Chris H

来源：IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2015, 23(7): 1360-1364.

DOI：10.1109/TVLSI.2014.2339364

• Bias temperature instability
• high-k/metal gate
• on-chip measurement
• reliability monitor
• ring oscillator

Ring-oscillator-based test structures that can separately measure the negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) degradation effects in digital circuits are presented for high-k metal gate devices. The mathematical derivation also shows that the structure for frequency degradation measurement can directly be used for estimating the portion of the NBTI and PBTI in the conventional ring oscillator. The proposed test structures including frequency degradation sensing circuitry have been implemented in an experimental high-k/metal gate SoI process.

• 出版日期2015-7