High-Performance Polycrystalline-Silicon Nanowire Thin-Film Transistors With Location-Controlled Grain Boundary via Excimer Laser Crystallization

作者：Wang Chao Lung^*; Lee I Che; Wu Chun Yu; Chou Chia Hsin; Yang Po Yu; Cheng Yu Ting; Cheng Huang Chung

来源：IEEE Electron Device Letters, 2012, 33(11): 1562-1564.

DOI：10.1109/LED.2012.2211857

• Excimer laser crystallization (ELC)
• location controlled
• nanowire (NW)
• polycrystalline silicon (poly-Si)

High-performance polycrystalline-silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) are demonstrated using excimer laser crystallization to control the locations of grain boundaries two-dimensionally. Via the locally increased thickness of the amorphous-silicon (a-Si) film as the seeds, the cross-shaped grain boundary structures were produced among these thicker a-Si grids. The NW TFTs with one primary grain boundary perpendicular to the channel direction could be therefore fabricated to achieve an excellent field-effect mobility of 346 cm(2)/V . s and an on/off current ratio of 3 x 10(9). Furthermore, the grain-boundary-location-controlled NW TFTs also exhibited better reliability due to the control of grain boundary locations. This technology is thus promising for applications of low-temperature poly-Si TFTs in system-on-panel and 3-D integrated circuits.

• 出版日期2012-11