科研之友
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摘要
This paper presents an analytic model for double-gate tunnel FETs with an exponential barrier. By carrying out the Wentzel-Kramer-Brillouin integral in closed form, an I-V model is formulated in terms of a single integral of a continuous function with respect to energy. The model shows that source degeneracy helps the linear region I-ds-V-ds characteristics, but degrades the saturation current. Also investigated is the role of the effective density of states on the debiasing of V-gs due to channel inversion charge at low V-ds. A high effective density of states is shown to lead to superlinear I-ds-V-ds characteristics.
- 出版日期2015-5
