A 77 GHz Low LO Power Mixer With a Split Self-Driven Switching Cell in 65 nm CMOS Technology

作者:Kim Seong Kyun; Cui Chenglin; Huang Guochi; Kim SoYoung; Kim Byung Sung
来源:IEEE Microwave and Wireless Components Letters, 2012, 22(9): 480-482.
DOI:10.1109/LMWC.2012.2213076

摘要

A low LO power mixer with high gain by using a split self-driven switching cell for automotive applications at 77 GHz is presented. By splitting the switching cell, the required LO power is reduced and the VCO has less capacitive loading. The mixer has a peak conversion gain of 6.8 dB and the input 1 dB compression point is -7 dBm at LO power of -5 dBm. The chip is fabricated in 65 nm CMOS technology and the chip size including a Marchand balun is 790 mu m x 590 mu m. The total power consumption is 3 mW from a 1.2 V supply.

  • 出版日期2012-9