Undoped and Al-doped ZnO films with tuned properties grown by pulsed laser deposition

作者：Papadopoulou E L^*; Varda M; Kouroupls Agalou K; Androulidaki M; Chikoidze E; Galtier P; Huyberechts G; Aperathitis E

来源：Thin Solid Films, 2008, 516(22): 8141-8145.

DOI：10.1016/j.tsf2008.04.022

• ZnO
• XRD
• PLD
• Optical properties
• Electrical properties

Thin films of ZnO:Al (AZO) and pure ZnO have been grown by pulsed laser deposition (PLD) at a wide temperature range (200-500 degrees C) and at different partial oxygen pressures (5 x 10(-5) -5 x 10(-2) mbar). The films have been characterized structurally, optically and electrically. It is observed that the presence of aluminum in the ZnO films results in an enlargement of the optical band gap (similar to 3.8 eV) while the transmittance is increased in comparison to pure ZnO films, to approximately 85%. Furthermore. in the AZO films Occurs a lowering of the resistivity to the order of magnitude of 10(-4) Omega cm. Finally, a sharp emission excitonic peak centered at 353.5 run was observed for the highly conductive (3.3 x 10(-4) Omega cm) ZnO:Al films.

• 出版日期2008-9-30