A Sub-Critical Barrier Thickness Normally-Off AlGaN/GaN MOS-HEMT

作者：Brown Raphael^*; Macfarlane Douglas; Al Khalidi Abdullah; Li Xu; Ternent Gary; Zhou Haiping; Thayne Iain; Wasige Edward

来源：IEEE Electron Device Letters, 2014, 35(9): 906-908.

DOI：10.1109/LED.2014.2334394

• GaN
• AlGaN
• MOS-HEMT
• normally-off
• enhancement-mode
• insulated gate
• PECVD SiO2

A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced two-dimensional electron gas for operation is presented. Single finger devices were fabricated using 10 and 20 nm plasma-enhanced chemical vapor-deposited silicon dioxide (SiO2) as the gate dielectric. They demonstrated threshold voltages (V-th) of 3 and 2 V, and very high maximum drain currents (I-DSmax) of over 450 and 650 mA/mm, at a gate voltage (V-GS) of 6 V, respectively. The proposed device is seen as a building block for future power electronic devices, specifically as the driven device in the cascode configuration that employs GaN-based enhancement-mode and depletion-mode devices.

• 出版日期2014-9