Air-stable ambipolar organic transistors

作者：Anthopoulos Thomas D^*; Anyfantis G C; Papavassiliou G C; de Leeuw Dago M

来源：Applied Physics Letters, 2007, 90(12): 122105.

DOI：10.1063/1.2715028

The authors report on ambipolar organic transistors based on the soluble dithiolene derivative (diphenylethylenedithiolato)(1,3-dithiol-2-thione-4,5-dithiolato)nickel [Ni(dpedt)(dmit)]. Due to its small band gap, efficient injection of holes and electrons from gold source/drain electrodes is possible. Both carrier mobilities are estimated to be approximately equal with maximum value on the order of 10(-4) cm(2)/V s. The transistors exhibit excellent ambient stability with a shelve lifetime exceeding 3 months. The pronounced stability of Ni(dpedt)(dmit) as well as of several other molecules studied here is correlated to their redox potential. The present findings can be used as a general guide towards design and synthesis of air-stable ambipolar/n-channel molecules.

• 出版日期2007-3-19