Nitrogen-Doped Partially Reduced Graphene Oxide Rewritable Nonvolatile Memory

作者：Seo Sohyeon; Yoon Yeoheung; Lee Junghyun; Park Younghun; Lee Hyoyoung^*

来源：ACS Nano, 2013, 7(4): 3607-3615.

DOI：10.1021/nn400588u

• nonvolatile memory
• partially reduced graphene oxide
• nitrogen doping
• polarization
• optical band gap

As memory materials, two-dimensional (2D) carbon materials such as graphene oxide (GO)-based materials have attracted attention due to a variety of advantageous attributes, including their solution-processability and their potential for highly scalable device fabrication for transistor-based memory and cross-bar memory arrays. In spite of this, the use of GO-based materials has been limited, primarily due to uncontrollable oxygen functional groups. To induce the stable memory effect by ionic charges of a negatively charged carboxylic acid group of partially reduced graphene oxide (PrGO), a positively charged pyridinium N that served as a counterion to the negatively charged carboxylic acid was carefully introduced on the PrGO framework. Partially reduced N-doped graphene oxide (PrGO(DMF)) in dimethylformamide (DMF) behaved as a semiconducting nonvolatile memory material. Its optical energy band gap was 1.7-2.1 eV and contained a sp(2) C=C framework with 45-50% oxygen-functionalized carbon density and 3% doped nitrogen atoms. In particular, rewritable nonvolatile memory characteristics were dependent on the proportion of pyridinum N, and as the proportion of pyridinium N atom decreased, the PrGO(DMF) film lost memory behavior. Polarization of charged PrGO(DMF) containing pyridinium N and carboxylic acid under an electric field produced N-doped PrGO(DMF) memory effects that followed voltage-driven rewrite-read-erase-read processes.

• 出版日期2013-4