Microstructures of AlGaN/AlN/Si (111) grown by metalorganic chemical vapor deposition

作者：Xi, DJ^*; Zheng, YD; Chen, P; Zhao, ZM; Chen, P; Xie, SY; Shen, B; Gu, SL; Zhang, R

来源：Physica Status Solidi (A) Applications and Materials Science, 2002, 191(1): 137-142.

DOI：10.1002/1521-396X(200205)191:1<137::AID-PSSA137>3.0.CO;2-R

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In this paper the X-ray photoelectron spectrum and the Auger electron spectrum were used to study the microstructures of AlGaN/AlN/Si (111) grown by metal organic chemical vapor deposition. The results indicated that a broad transition region, about 20 nm, was present at the interface of AlN/Si and it was composed of AlN and SiNx (0 less than or equal to x less than or equal to 4/3). In AlN film the existence of Si-Si bonds was found. In the interface of AlGaN/AlN, the main incorporation form of N-1s varied gradually from AlN to the compound of GaN and AlN The diffusion of Si atoms was so strong at the high growth temperatures that the signal of Si-2p could be found throughout the epilayer.

• 出版日期2002-5-16
• 单位南京大学