Itinerant magnetism in doped semiconducting beta-FeSi2 and CrSi2

作者：Singh David J^*; Parker David

来源：Scientific Reports, 2013, 3(1): 3517.

DOI：10.1038/srep03517

Novel or unusual magnetism is a subject of considerable interest, particularly in metals and degenerate semiconductors. In such materials the interplay of magnetism, transport and other Fermi liquid properties can lead to fascinating physical behavior. One example is in magnetic semiconductors, where spin polarized currents may be controlled and used. We report density functional calculations predicting magnetism in doped semiconducting beta-FeSi2 and CrSi2 at relatively low doping levels particularly for n-type. In this case, there is a rapid cross-over to a half-metallic state as a function of doping level. The results are discussed in relation to the electronic structure and other properties of these compounds.

• 出版日期2013-12-17