Heavy copper wire-bonding on silicon chips with aluminum-passivated Cu bond-pads

作者：Gross David^*; Haag Sabine; Reinold Manfred; Schneider Ramelow Martin; Lang Klaus Dieter

来源：Microelectronic Engineering, 2016, 156: 41-45.

DOI：10.1016/j.mee.2015.12.017

• Copper
• Wire-bonding
• Passivation
• Electro-chemical deposition
• Aluminum
• Cleaning
• Oxidation

Thick electroplated Cu bond-pads have recently been shown to allow for heavy Cu wire-bonding on silicon power devices. The Cu surface oxides present on these pads are a major concern for the bonding process and for a sufficiently stable bond formation. They currently have to be removed after the die-attach and prior to wire bonding. To avoid such removal, the application of a thin Al coating on the Cu bond-pads is investigated for its passivating ability and its suitability for the bonding process.

• 出版日期2016-4-20