摘要

Using a pi-type multiple coupled microstrip line structure (MCMLS) and an R-C-R isolation compensation circuit, an ultra-compact and high isolation power divider was fabricated on a GaAs substrate. The line length of the power divider was reduced to lambda/46 by using the IT-type MCMLS. The size of the power divider is 0.304 mm(2), which is 12.1 percent of a conventional Wilkinson power divider on a GaAs substrate. Thanks to the R-C-R isolation compensation circuit, the isolation characteristic of the proposed power divider is highly improved. The proposed power divider shows good RF performances in the C-/X-Band.

  • 出版日期2012-3