A p -%26gt; n transition for Sn-doped Cu(In,Ga)Se-2 bulk materials

作者：Monsefi Mehrdad; Kuo Dong Hau^*

来源：Journal of Solid State Chemistry, 2013, 204: 108-112.

DOI：10.1016/j.jssc.2013.05.030

• Cu(In,Ga)Se-2
• Defect
• Electrical property
• Thin-film solar cells
• Reactive sintering

Cu(In,Ga)Se-2 (CIGSe) pellets at different Sn contents were fabricated by reactive liquid-phase sintering at 600-700 degrees C with the help of sintering aids of Sb2S3 and Te. Powder preparation was based upon the molecular formula of Cu-0.9[(In0.7-xSnxGa0.3)(0.9)Sh(0.1)](S0.15Te0.2Se1.65) or Sn-x-CIGSe. Morphology, structure, and electrical property of Sn-doped CIGSe bulks were investigated. The composition of Sn-doped CIGSe is purposely designed for studying the doping effect on the CIGSe performance. The unexpected increase in hole concentration of CIGSe due to the donor doping is rationalized. A controllable n-type semiconductor is deliberately achieved for Sn-0.15-CIGSe and important for making a p/n homojunction in CIGSe solar cells.

• 出版日期2013-8