科研之友
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摘要
In this work, we propose a novel transistor called dual-channel source/drain-tied (DCSDT) MOSFET. The process for producing the device employs the multiple epitaxial growths of SiGe/Si layers and selective SiGe removal to form the block oxide island (BOI) in this work. Due to the source/drain-tied scheme giving more pass way to dissipate generated heat, the both DC and RF/analog performance of the device are not seriously affected according to the numerical simulation results.
- 出版日期2011
- 单位中山大学
