Mechanisms of Threshold Voltage Shift in Polymorphous and Microcrystalline Silicon Bottom Gate Thin-Film Transistors

作者：Oudwan Maher^*; Abramov Alexei; Daineka Dmitri; Roca i Cabarrocas Pere

来源：Journal of Display Technology, 2012, 8(1): 23-26.

DOI：10.1109/JDT.2011.2165696

• Bottom gate
• microcrystalline silicon
• polymorphous silicon (pm-Si:H)
• thin-film transistor (TFT)
• threshold voltage

In this paper, we have studied the stability of polymorphous silicon (pm-Si: H) and c-Si: F: H bottom gate thin-film transistors (TFTs) by combining degradation and relaxation experiments under various stress conditions. We report on polymorphous silicon (pm-Si: H) TFTs with V(TH) = 1V after 10 h of stress and mu c-Si: F: H TFTs with superior stability, which show a Delta V(TH) of only 0.05 V under stress conditions similar to those encountered in active-matrix operation regime (V(G) and V(D) = 10V). Relaxation studies show that the quality of the interface between silicon nitride and pm-Si: H (or mu c-Si: F: H) controls the stability at short stress times. Interestingly, the deposition conditions of the semiconductor layer seem to modify the quality of the a-SiN: H and thus the stability of the interface.

• 出版日期2012-1