Multilayer epitaxial graphene grown on the SiC (000(1)over-bar) surface; structure and electronic properties

作者：Sprinkle M^*; Hicks J; Tejeda A; Taleb Ibrahimi A; Le Fevre P; Bertran F; Tinkey H; Clark M C; Soukiassian P; Martinotti D; Hass J; Conrad E H

来源：Journal of Physics D: Applied Physics , 2010, 43(37): 374006.

DOI：10.1088/0022-3727/43/37/374006

We review the progress towards developing epitaxial graphene as a material for carbon electronics. In particular, we discuss improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's (MEG's) electronic properties. Although graphene grown on both polar faces of SiC will be discussed, our discussions will focus on graphene grown on the (0 0 0 (1) over bar) C-face of SiC. The unique properties of C-face MEG have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal stacked graphite sample. The origins of multilayer graphene's electronic behaviour are its unique highly ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that leads to each sheet behaving like isolated graphene planes.

• 出版日期2010-9-2
• 单位中国地震局