Bonding modes and electronic properties of single-crystalline silicon nanotubes

作者:Yan BH; Zhou G; Wu J; Duan WH*; Gu BL
来源:Physical Review B, 2006, 73(15): 155432.
DOI:10.1103/PhysRevB.73.155432

摘要

The structural characteristics, bonding modes, and electronic properties of single-crystalline silicon nanotubes (sc-SiNTs) are investigated by using the first-principles method. These pristine sc-SiNTs with sp(3) hybridization, constructed by the bulklike tetrahedrally coordinated Si atoms, are found to be energetically stable. The electronic property is sensitive to the external diameter, tube-wall thickness, and tube-axis orientation due to quantum confinement effects. A direct band gap is observed in SiNTs with smaller sizes. The band gap increases monotonically with decreasing tube-wall thickness, in accord with the substantial blueshift observed in the experiment. It is suggested that this type of SiNTs would have promising practical applications in nanoscale light-emitting devices and electronic devices.

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