Analytical Surface Potential Modelling-Based Small Signal Analysis and RF Performance Characterization of DMG SOI MOSFET for Better RFIC Application

作者：Malakar Tiya Dey^*; Bhattacharyya Partha; Sarkar Subir Kumar

来源：IETE Technical Review, 2018, 35(3): 282-291.

DOI：10.1080/02564602.2017.1283252

• Charge sheet model
• DMG SOI MOSFET
• Short channel effects (SCEs)

A two-dimensional Poisson's equation solution-based analytical model including quantum mechanical effects (QMEs) of dual material gate silicon on insulator (DMG SOI) MOSFET structure has been presented. A small signal equivalent circuit of DMG SOI MOS transistor has been developed to analyze the frequency response which reveals its better RF IC applicability in high-frequency regions. Analytical model-based simulation results are also compared with the results of 2D device simulator to verify that the performance of the proposed DMG SOI MOS device is improved in terms of current driving capability, gain frequency characteristics and frequency response characteristics using Smitchchart, etc.

• 出版日期2018