摘要
Here we report on the fabrication of high-density aligned Si nanotip arrays by chemical vapor deposition followed by dry oxidation and an etching treatment. The dry oxidation investigations indicated that Al-catalyst particles located at the tip of Si nanocones enhance their sharpening. This oxidation behavior is quite different from that of Au-catalyzed Si nanowires and is more favorable to form very sharp Si nanotips. Field emission from an individual Si nanotip showed good field-emission characteristic with a high emission current density of 1x10(4) A/cm(2) because of its sharp tip geography, suggesting their potential application for field emitters. Our work provides an effective approach to fabricate high-density Si nanotip arrays, which overcomes some problems in the conventional fabrication approaches, such as high cost, poor controllability, and complicated process.
- 出版日期2010-6
- 单位浙江大学