Anomalous bias dependence of tunnel magnetoresistance in a magnetic tunnel junction

作者：Mukhopadhyay S^*; Das I; Pai SP; Raychaudhuri P

来源：Applied Physics Letters, 2005, 86(15): 152108.

DOI：10.1063/1.1901823

We have fabricated a spin-polarized tunneling device based on half-metallic manganites incorporating Ba2LaNbO6 as an insulating barrier. An anomalous bias dependence of tunnel magnetoresistance (TMR) has been observed, the first of its kind in a symmetric electrode tunnel junction with a single insulating barrier. The bias dependence of TMR shows an extremely sharp zero-bias anomaly, which can be considered as a demonstration of the drastic density of states variation around the Fermi level of the half-metal. This serves as strong evidence for the existence of minority-spin tunneling states at the half-metal-insulator interface.

• 出版日期2005-4-11