摘要

This paper presents a high-gain differential CMOS low noise amplifier (LNA) for 3.1-10.6 GHz ultra-wideband receivers. A novel structure that combines capacitive cross-coupling common-gate topology with common-source topology is proposed, which increases the power gain greatly and imposes little impact on other performances of the LNA. The LNA is designed in the TSMC 0.18 mu m CMOS technology. Post-layout simulation results show that the LNA achieves a power gain of 14.9 similar to 16 dB and a noise figure of 3.5 similar to 4.9 dB with a current consumption of 6.3 mA from a 1.8 V power supply. The layout area is 0.7 x 0.9 mm(2).