A source drain symmetric and interchangeable bidirectional tunneling field effect transistor

作者：Jin, Xiaoshi^*; Gao, Yunxiang; Liu, Xi; Lee, Jong-Ho

来源：AIP Advances, 2018, 8(8): 085318.

DOI：10.1063/1.5040536

• ANALYTICAL-MODEL
• GATE TFET
• PERFORMANCE
• IMPROVEMENT
• BANDGAP

A novel bidirectional tunneling field effect transistor with source drain symmetric and interchangeable functions (SDSI BT FET) is proposed in this work. Different from the conventional tunneling field effect transistors (TFET), once the absolute value of drain-to-source bias voltage is determined, no matter which of the source drain interchangeable electrode is set to be drain, the proposed SDSI BT FET brings stable and unified transfer characteristics, thereafter, shows the source drain symmetric and interchangeable functions, which makes it more compatible with CMOS circuit compared to conventional TFET. It also has inherited the advantages of conventional TFET including lower subthreshold swing, lower static power dissipation, etc. Furthermore, through design optimization, a lower reverse biased leakage current and higher Ion-Ioff ratio can be observed.

• 出版日期2018-8
• 单位沈阳工业大学