A heterojunction modulation-doped Mott transistor

作者：Son Junwoo; Rajan Siddharth; Stemmer Susanne; Allen S James^*

来源：Journal of Applied Physics, 2011, 110(8): 084503.

DOI：10.1063/1.3651612

A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron correlation induced Mott metal-to-insulator transition. The Mott material is remotely (modulation) doped with a degenerately doped conventional band insulator. An applied voltage modulates the electron transfer from the doped band insulator to the Mott material and produces transistor action by inducing an insulator-to-metal transition. Materials parameters from rare-earth nickelates and SrTiO(3) are used to assess the potential of the "modulation-doped Mott FET" (ModMottFET or MMFET) as a next-generation switch. It is shown that the MMFET is characterized by unique "charge gain" characteristics as well as competitive transconductance, small signal gain, and current drive.

• 出版日期2011-10-15