Analysis of single junction a-Si:H solar cells grown on different TCO%26apos;s

作者：Prusakova Lucie^*; Flickyngerova Sona; Fischer Marinus; Novotny Ivan; Tijssen Martijn; Netrvalova Marie; Zeman Miro; Tvarozek Vladimir; Sutta Pavol

来源：Vacuum, 2012, 86(6): 765-768.

DOI：10.1016/j.vacuum.2011.07.038

• Thin film solar cell
• Hydrogenated amorphous silicon
• Transparent conductive oxide
• X-ray diffraction
• Structure
• Surface morphology

In consequence of previous investigation of individual transparent conductive oxide (TCO) and absorber layers a study was carried out on hydrogenated amorphous silicon (a-Si:H) solar cells with diluted intrinsic a-Si:H absorber layers deposited on glass substrates covered with different TCO films. The TCO film forms the front contact of the super-strata solar cell and has to exhibit good electrical (high conductivity) and optical (high transmittance) properties. In this paper we focused our attention on the influence of using different TCO%26apos;s as a front contact in solar cells with structure as follows: Corning glass substrate/TCO (800, 950 nm)/p-type mu c-Si:H (similar to 5 nm)/p-type a-Si:H (10 nm)/a-SiC:H buffer layer (similar to 5 nm)/intrinsic a-Si:H absorber layer with dilution R = [H-2]/[SiH4] = 20 (300 nm)/n-type a-Si:H layer (20 nm)/Ag + Al back contact (100 + 200 nm). Diode sputtered ZnO:Ga, textured and non-textured ZnO:Al [3] and commercially fabricated ASAHI (SnO2:F) U-type TCO%26apos;s have been used. The morphology and structure of ZnO films were altered by reactive ion etching (RIE) and post-deposition annealing. %26lt;br%26gt;It can be concluded that the single junction a-Si:H solar cells with ZnO:Al films achieved comparable parameters as those prepared with commercially fabricated ASAHI U-type TCO%26apos;s.

• 出版日期2012-1-27