A Sub-mu W Bandgap Reference Circuit With an Inherent Curvature-Compensation Property

作者：Lee Kin Keung^*; Lande Tor Sverre; Hafliger Philipp Dominik

来源：IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2015, 62(1): 1-9.

DOI：10.1109/TCSI.2014.2340553

• bandgap reference
• CMOS
• curvature-compensation
• low-power
• nano-meter (nm)
• nano-watt (nW)
• wireless sensor network

A new current-mode bandgap reference circuit (BGR) which is capable of generating sub-1-V output voltage is presented. It has not only the lowest theoretical minimum current consumption among published current-mode BGRs, but also additional advantages of an inherent curvature-compensation function and not requiring NPN BJTs. The curvature-compensation is achieved by utilizing the exponential behavior of sub-threshold CMOS transistors to compensate the BJT base-emitter voltage high-order temperature dependence. By taking advantages of the continuing development of CMOS technology, sub-mu W power consumption is achieved with a reasonable core area. Related design considerations and challenges are discussed and analyzed. The proposed BGR is realized in a TSMC 90 nm process. Measurement results shows a temperature coefficient without trimming as low as 10.1 ppm/degrees C over a temperature range of 70 degrees C because of the proposed curvature-compensation technique. The average value is 32.6 ppm/degrees C which could be improved by trimming resistor ratios. The average power consumption at room temperature is 576 nW, with a core area of only 0.028 mm(2).

• 出版日期2015-1