A comparative study of n-channel low temperature poly-Si thin-film transistors with a body terminal or a lightly-doped-drain structure

作者：Wu, Yanwen; Wang, Mingxiang^*; Wang, Huaisheng; Zhang, Dongli

来源：Semiconductor Science and Technology, 2018, 33(2): 025003.

DOI：10.1088/1361-6641/aaa141

• low temperature poly-Si (LTPS)
• thin-film transistor (TFT)
• lateral body terminal
• hot carrier (HC)

Hot-carrier (HC) induced degradation is a critical reliability issue of n-channel low temperature poly-Si thin-film transistors (TFTs) in TFT-based circuits. In this work, a kind of four-terminal TFT, which has an additional p(+)-doped lateral body terminal connecting to the floating channel, is systematically compared to conventional n-channel TFT and lightly-doped-drain (LDD) TFT. We demonstrate that the four-terminal TFT can provide similar advantages to that of the LDD TFT such as kink current suppression and DC HC degradation immunity, much superior immunity to the dynamic HC degradation, but without any tradeoffs in device performance and process complexity of the LDD TFT. It has high performance, as well as excellent reliability under both DC and AC conditions.

• 出版日期2018-2
• 单位苏州大学