Transport properties of Ru-doped La1.85Sr0.15CuO4 and the effect of carrier concentration compensation

作者：Xiong YM; Li L; Luo XG; Zhang HT; Wang CH; Li SY; Chen XH^*

来源：Journal of Physics: Condensed Matter , 2003, 15(10): 1693-1704.

DOI：10.1088/0953-8984/15/10/317

This paper is a study of the structure and transport properties of Ru-doped La1.85Sr0.15CuO4. It is found that Ru substitution for Cu has two effects. (1) Ru doping introduces disorder into the system, which causes a metal-insulator transition with high localization. (2) There is a hole-filling effect due to the valence of the Ru ion being higher than that of the Cu ion. Increase of the strontium content could compensate for the imbalance of valence caused by doping with the high-valence Ru ion. A universal curve for T-c versus the number of holes per Cu site is observed for the La2-ySryCu1-xRuxO4 system, indicating that a rigid-band model holds and T-c correlates with features in the density of states, such as a Van Hove singularity.

• 出版日期2003-3-19
• 单位中国科学技术大学