A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part II: Total Charges and Intrinsic Capacitance Characteristics

作者：Moldovan Oana^*; Lime Francois; Iniguez Benjamin

来源：IEEE Transactions on Electron Devices, 2014, 61(9): 3042-3046.

DOI：10.1109/TED.2014.2342273

• AC
• capacitances
• gate-all-around (GAA) MOSFET
• total charges

Analytical and explicit expressions are derived for intrinsic capacitances of the junctionless gate-all-around transistor, from the charge-control model, valid in the two regions of operation, depletion mode and accumulation mode. The advantage of this model is that it reduces to simple expressions for each region, giving a higher computation speed. We obtain very good agreement between the calculated capacitance characteristics and 3-D numerical device simulations.

• 出版日期2014-9