High-Mobility Pentacene-Based Thin-Film Transistors With a Solution-Processed Barium Titanate Insulator

作者：Wei Chia Yu^*; Kuo Shu Hao; Hung Yu Ming; Huang Wen Chieh; Adriyanto Feri; Wang Yeong Her

来源：IEEE Electron Device Letters, 2011, 32(1): 90-92.

DOI：10.1109/LED.2010.2084559

• Barium titanate
• high field-effect mobility
• high permittivity
• organic thin-film transistor (OTFT)
• solution process

Pentacene-based organic thin-film transistors (OTFTs) with solution-processed barium titanate (Ba(1.2)Ti(0.8)O(3)) as a gate insulator are demonstrated. The electrical properties of pentacene-based TFTs show a high field-effect mobility of 8.85 cm(2) . V(-1) . s(-1), a low threshold voltage of -1.89 V, and a low subthreshold slope swing of 310 mV/decade. The chemical composition and binding energy of solution-processed barium titanate thin films are analyzed through X-ray photoelectron spectroscopy. The matching surface energy on the surface of the barium titanate thin film is 43.12 mJ . m(-2), which leads to Stranski-Krastanov mode growth, and thus, high mobility is exhibited in pentacene-based TFTs.

• 出版日期2011-1