Demonstration of 3500-V 4H-SiC Lateral MOSFETs

作者：Lee Wen Shan^*; Lin Cheng Wei; Yang Ming Hsien; Huang Chih Fang; Gong Jeng; Feng Zhao

来源：IEEE Electron Device Letters, 2011, 32(3): 360-362.

DOI：10.1109/LED.2010.2101041

• High-voltage
• lateral
• MOSFET
• reduced surface field (RESURF)
• semi-insulating substrate
• 4H-SiC

High-voltage 4H-SiC lateral MOSFETs with different gate layouts, channel lengths, and drift region lengths were fabricated on the (0001) face of a high-purity semi-insulating substrate. A breakdown voltage of 3520 V was achieved on a circular gate device with a channel length of 5 mu m and a drift region length of 80 mu m. This is, to the best knowledge of the authors, the highest value among 4H-SiC lateral MOSFETs ever reported. The specific on-resistance is 600 m Omega-cm(2), which results in a figure-of-merit (BV(2)/R(on,sp)) of 20.6 MW/cm(2), which is comparable with other 4H-SiC lateral MOSFETs reported in the literature. It was found that the use of a circular gate layout effectively reduces the reverse leakage current at high voltages.

• 出版日期2011-3
• 单位中国科学院电工研究所; 清华大学