摘要

This study explores a strategy of using phosphonic acid derivative as self-assembled monolayer (SAMs) on Si/SiO2 surface and using 6,13-pentacenequinone (PQ) as the template layer to induce the crystallization of 6,13-diphenylpentacene (DPP) in vacuum deposited thin film transistors, which showed the field-effect mobility as high as 8.3 x 10(-3) cm(2)/V s. It is found that n-Octadecylphosphonic acid (ODPA) SAMs plays a unique role in modulating the morphology of PQ to form flat layer, which is helpful for crystallization of DPP. This indicated that ODPA bilayer-step surface play important roles in controlling the growth of both PQ and DPP by vacuum thermal deposition.