科研之友
微信
新浪微博
Facebook
分享链接
摘要
The results of experimental investigation of galvanomagnetic phenomena in single-crystalline and block films of tellurium-doped bismuth in the temperature range of 77-300 K and in the film-thickness range of 0.1-1 mu m are presented. It is shown that the charge-carrier concentration in the investigated films is independent of thickness, the charge carriers are scattered at phonons, the film surface, structural defects, and crystallite boundaries. The values and ratio of the listed contributions to the restriction of charge-carrier mobility depend on the tellurium content, film thickness, and also their single-crystalline or block state.
- 出版日期2014-5
- 单位中国科学院电工研究所
