An atomtronics transistor for quantum gates

作者:Gajdacz Miroslav; Opatrny Tomas*; Das Kunal K
来源:Physics Letters, Section A: General, Atomic and Solid State Physics , 2014, 378(28-29): 1919-1924.
DOI:10.1016/j.physleta.2014.04.043

摘要

We present a mechanism for quantum gates where the qubits are encoded in the population distribution of two-component ultracold atoms trapped in a species-selective triple-well potential. The gate operation is a specific application of a different design for an atomtronics transistor where inter-species interaction is used to control transport, and can be realized with either individual atoms or aggregates like Bose-Einstein condensates (BEC). We demonstrate the operational principle with a static external potential, and show feasible implementation with a smooth dynamical potential.

  • 出版日期2014-5-30