摘要
A novel X-ray detector diode, optimized for angular independent (isotropic) dose response, is presented. The diode is designed as a silicon cube with p-n junctions on all six sides, which creates a device that is close to being symmetrical in 3D. The cube edge is 300 mu m or 410 mu m. Its manufacturing process is based on micromachining, featuring deep reactive ion etching (DRIE) of silicon-on-insulator (SOI) substrates, doping of vertical walls from gas phase dopants and re-fill of etched trenches with polysilicon. The variation in detector response to 6 MV X-rays, in a +/- 30 degrees beam angle range, was at best +/- 0.5% for a cubic diode compared to +/- 3.3% for conventional diodes, which indicates improvement by a factor 7.
- 出版日期2014-7-1