Updated structure of vertical double-diffused MOSFETs for irradiation hardening against single events

作者：Tang, Zhaohuan^*; Li, Xingji; Tan, Kaizhou; Liu, Chaoming; Fu, Xinghua

来源：Journal of Computational Electronics, 2018, 17(4): 1578-1583.

DOI：10.1007/s10825-018-1224-7

• Power MOSFETs
• Irradiation hardened
• Single-event burnout
• Single-event gate rupture
• Recombination mechanism

The gate oxide layer and parasitic bipolar junction transistor are inherent elements of vertical double-diffused power metal-oxide-semiconductor field-effect transistors (MOSFETs). Single-event gate rupture (SEGR) and single-event burnout (SEB) may be triggered by penetration of energetic ions through sensitive regions of such MOSFET devices when used in space environments. Based on the recombination mechanism in a heavily doped P+ buried layer and the higher breakdown voltage when using a thick oxide layer, a new structure for power MOSFETs that are irradiation hardened against SEGR and SEB was developed in this work, based on three typical characteristics: an N+ buried layer, a P+ buried layer, and a thick oxide above the neck. The results reveal that the safe operation region of such an N-channel power MOSFET in a single-event irradiation environment is enhanced by 300 % for a linear energy transfer value of 98 MeV cm(2)/mg. Such structures could be widely used when designing single-event irradiation-hardened power MOSFETs.

• 出版日期2018-12
• 单位贵州大学; 哈尔滨工业大学