Nanocasting of High Surface Area Mesoporous Ga2O3 and GaN Semiconductor Materials

作者：West Colin; Mokaya Robert^*

来源：Chemistry of Materials, 2009, 21(17): 4080-4086.

DOI：10.1021/cm902015f

We report mesostructured gallium oxide and nanoporous gallium nitride, synthesized via a nanocasting technique using mesoporous carbon as template. The carbon template is first loaded with a gallium chloride toluene solution to generate a Ga precursor/carbon composite. Gallium oxide is generated by reaction of the composite in air during calcination, which also eliminates the carbon template. Formation of mesostructured Ga2O3 requires a two-stage oxidation reaction, first at 450 degrees C and followed by 500 degrees C, X-ray diffraction, nitrogen physisorption, and transmission electron microscopy show the Ga2O3 products to be mesostructured with a very high surface area of 307 m(2)/g and pore volume of 0.54 cm(3)/g. The Ga2O3 exhibits a band gap energy of 4.6 eV. Thermal treatment of the Ga/carbon composite in the presence of ammonia (i.e., nitridation) generates crystalline nanoporous GaN with surface area of 136-156 m(2)/g and pore volume of 0.3-0.4 cm(3)/g.

• 出版日期2009-9-8