Alignment method combining interference lithography with anisotropic wet etch technique for fabrication of high aspect ratio silicon gratings

作者：Zheng, Yanchang; Qiu, Keqiang^*; Chen, Huoyao; Chen, Yong; Liu, Zhengkun; Liu, Ying; Xu, Xiangdong; Hong, Yilin

来源：Optics Express, 2014, 22(19): 23592-23604.

DOI：10.1364/OE.22.023592

• ON-INSULATOR WAFERS
• X-RAY-DIFFRACTION
• DARK-FIELD
• INTERFEROMETER
• TRANSMISSION
• ARRAYS

A method was developed for aligning interference fringes generated in interference lithography to the vertical {111} planes of [110] oriented silicon wafers. The alignment error is 0.036 degrees. This high precision method makes it possible to combine interference lithography with anisotropic wet etch technique for the fabrication of high aspect ratio silicon gratings with extremely smooth sidewalls over a large sample area. With this alignment method, 320 nm and 2 mu m period silicon gratings have been successfully fabricated. The highest aspect ratio is up to 100. The sample area is about 50 mm x 60 mm. The roughness (root mean square) of the sidewall is about 0.267 nm.

• 出版日期2014-9-22
• 单位中国工程物理研究院激光聚变研究中心; 中国科学技术大学; 中国工程物理研究院