科研之友
微信
新浪微博
Facebook
分享链接
摘要
Light-element impurities in multicrystalline silicon (mc-Si) used for fabricating photovoltaic cells have been studied by Fourier transform infrared spectroscopy. Using this method, a new infrared absorption peak at 1206 cm(-1) was found in B-doped mc-Si grown by the cast method with a Si(3)N(4)-coated crucible, and was attributed to B-N complexes. We have investigated this peak in detail and examined its origin, and we have concluded that it is not due to B-N complexes but arises from the second harmonic of the substitutional carbon (Cs), the fundamental peak of which is observed at 605 cm(-1).
- 出版日期2011-5
