摘要
A p-type Cr-doped TiO2 photo-electrode is fabricated using a pulsed laser deposition method on a Sn doped indium-oxide-coated glass sheet (ITO). The p-type properties of the as-prepared Cr-doped TiO2 photo-electrode are suggested to be attributed to unique substitutional Cr4+ doping in the TiO2 lattice.