Atom probe analysis of interfacial abruptness and clustering within a single InxGa1-xN quantum well device on semipolar (10(1)over-bar(1)over-bar) GaN substrate

作者：Prosa T J^*; Clifton P H; Zhong H; Tyagi A; Shivaraman R; DenBaars S P; Nakamura S; Speck J S

来源：Applied Physics Letters, 2011, 98(19): 191903.

DOI：10.1063/1.3589370

Pulsed laser atom probe tomography (APT) of InxGa1-xN single quantum well (SQW) grown on semipolar (10 (1) over bar(1) over bar) GaN orientation estimates the interior atomic composition within the SQW at 6.5 +/- 0.7 at. % In, 46.2 +/- 0.7 at. % Ga, and 47.3 +/- 0.7 at. % N. The atom probe analysis is performed in both "top-down" and "cross-section" orientations. Self-consistent Schrodinger-Poisson simulation employing structural and compositional parameters obtained from APT results estimates the polarization field within the SQW at 720 kV/cm. A statistical method for the evaluation of indium homogeneity within the SQW is also considered.

• 出版日期2011-5-9